文件名称:topological insulator in GaN_InN quantum well
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改代码能够计算GaN_InN 量子阱内的能带结构，该体系为拓扑绝缘体体系，能够计算基本的 能带结构，电子密度分布，边沿态等。。
参看文献：
[1]. Dan M, Hu G, Li L, et al. High Performance Piezotronic Logic Nanodevices Based on GaN/InN/GaN Topological Insulator[J]. Nano Energy, 2018.
[2]. Miao M S, Yan Q, Van de Walle C G, et al. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well[J]. Physical review letters, 2012, 109(18): 186803.(topological insulator, quantum well, GaN/InN quantum well, edge states, electronic density distribution, band structure)
参看文献：
[1]. Dan M, Hu G, Li L, et al. High Performance Piezotronic Logic Nanodevices Based on GaN/InN/GaN Topological Insulator[J]. Nano Energy, 2018.
[2]. Miao M S, Yan Q, Van de Walle C G, et al. Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well[J]. Physical review letters, 2012, 109(18): 186803.(topological insulator, quantum well, GaN/InN quantum well, edge states, electronic density distribution, band structure)
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下载文件列表
| 文件名 | 大小 | 更新时间 |
|---|---|---|
| edge_state_GaN_InN.m | 1968 | 2018-08-01 |
| band_structure_GaN_InN.m | 1750 | 2018-08-01 |
| band_structure_GaN_InN_TB.m | 1237 | 2018-03-03 |