文件名称:25
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The understanding of the switching procedure of an IGBT requires a more
detailed descr iption. It is very similar to a MOSFET. The main difference occurs
at turn-off when a current tail appears, see Figure 2.2 [5]. When turning on, a
positive voltage is applied on the gate circuit (VGE), which results in a constant
detailed descr iption. It is very similar to a MOSFET. The main difference occurs
at turn-off when a current tail appears, see Figure 2.2 [5]. When turning on, a
positive voltage is applied on the gate circuit (VGE), which results in a constant
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