文件名称:6908-7
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We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.-We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.-We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser
(VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power
conversion efficiency were developed as the basic building block of these arrays. More than 230W of continuous-wave
(CW) power is demonstrated a ~5mm x 5mm array chip. In quasi-CW mode, smaller array chips exhibit 100W
output power, corresponding to more than 3.5kW/cm2 of power density.
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