文件名称:Effect-of-the-Changing-DBR-Doping
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This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.-This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.-This study is an attempt to investigate the
effect of distributed Bragg reflectors (DBRs) doping
concentration on the GaN-based vertical cavity surface
emitting lasers (VCSEL) using Integrated System
Engineering Technical Computer Aided Design (ISE
TCAD) software. Uniformly n (Up) and p (Down)
doping concentration, changed ranging 5e+17 to
1e+19 cm-3. The observation revealed that as DBR
doping concentrations rose, the output power increased
and the threshold current reduced. These are attributed
to the increase in radiative recombination and decrease
in the optical losses which has induced the
scattering process.
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Effect of the Changing DBR Doping.pdf