文件名称:205-GHz-AlInN-HEMT-EDL_05545347-(2)
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205-GHz (Al,In)N/GaN HEMTs.more than 15 years of development,
AlGaN/GaN high-electron-mobility transistors (HEMTs)
have become the most technologically mature form of GaNbased
HEMTs. There is, however, growing evidence that the
total strain (i.e., the lattice-mismatch and piezoelectric contributions)
limits the reliability of conventional AlGaN/GaN
HEMTs
AlGaN/GaN high-electron-mobility transistors (HEMTs)
have become the most technologically mature form of GaNbased
HEMTs. There is, however, growing evidence that the
total strain (i.e., the lattice-mismatch and piezoelectric contributions)
limits the reliability of conventional AlGaN/GaN
HEMTs
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205 GHz AlInN HEMT EDL_05545347.pdf