本源码是基于S3C—6430的ARM11嵌入式开发板的NAND FLASH程序的编写。NAND写回速度快、芯片面积小，特别是大容量使其优势明显。页是NAND中的基本存贮单元，一页一般为512 B(也有2 kB每页的large page NAND FLASH)，多个页面组成块。不同存储器内的块内页面数不尽相同，通常以16页或32页比较常见。块容量计算公式比较简单，就是页面容量与块内页面数的乘积。根据FLASH Memory容量大小，不同存储器中的块、页大小可能不同，块内页面数也不同。例如：8 MB存储器，页大小常为512 B、块大小为8 kB，块内页面数为16。而2 MB的存储器的页大小为256 B、块大小为4 kB，块内页面数也是16。NAND存储器由多个块串行排列组成。实际上，NAND型的FLASHMemory可认为是顺序读取的设备，他仅用8 b的I/O端口就可以存取按页为单位的数据。NAND在读和擦写文件、特别是连续的大文件时，速度相当快。-NAND write-back speed, small chip area, especially the large capacity make it obvious advantages. Page in the NAND storage unit, a general 512 B, (also have 2 kB per page large page NAND FLASH), multiple page composition. Number of pages within the memory block is different, usually more common 16 or 32. Block capacity formula is relatively simple, is the product of the page capacity and number of pages in the block. FLASH Memory size memory block, the page size may be different, the number of pages in the block. For example: 8 MB of memory, the page size is often 512 B, the block size of 8 kB, the number of pages in the block 16. The page size of 2 MB of memory, 256 B, the block size is 4 kB block, number of pages is 16. NAND memory by more than one block of the serial arrangement. In fact, NAND FLASHMemory can be considered to be the order of read devices, he took only 8-b I/O ports can access the data by page. NAND read and erase files, especially consecutive large files very fast.