文件名称:Nano-tube
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The continuous growth of recent mobile and portable devices and applications has
caused a tremendous thrust for low power circuit design. Static random access memory
(SRAM) is a highly used circuit in modern processors and occupies a considerable
portion of chip area.
caused a tremendous thrust for low power circuit design. Static random access memory
(SRAM) is a highly used circuit in modern processors and occupies a considerable
portion of chip area.
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下载文件列表
InTech-Compact_modeling_of_carbon_nanotube_transistor_and_interconnects.pdf
InTech-Numerical_modeling_of_the_i_v_characteristics_of_carbon_nanotube_field_effect_transistors.pdf
intro_dd_padre_ppt.pdf
j29.pdf
Lect15_Ref1.pdf
HSPICE- User Guide.pdf
Hspice_Mannual_2001.4.pdf
Imre_CNT_devices.ppt
InTech-Numerical_modeling_of_the_i_v_characteristics_of_carbon_nanotube_field_effect_transistors.pdf
intro_dd_padre_ppt.pdf
j29.pdf
Lect15_Ref1.pdf
HSPICE- User Guide.pdf
Hspice_Mannual_2001.4.pdf
Imre_CNT_devices.ppt