文件名称:nanomos-r186.tar
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nanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of three transport models is currently available (drift-diffusion, classical ballistic, and quantum ballistic). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.
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nanomos-r186
tar
gz
ballistic
matlab
code
poisson-schroginder
nanomos-r186
tar
quantum
poisson
equation
nanomos-r186
tar
gz
ballistic
matlab
code
poisson-schroginder
nanomos-r186
tar
quantum
poisson
equation
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064101356nanomos-r186.tar