文件名称:3V
- 所属分类：
- 其他嵌入式/单片机内容
- 资源属性：
- [PDF]
- 上传时间：
- 2012-11-26
- 文件大小：
- 706kb
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- 0次
- 提 供 者：
- 季**
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我们对处理速度的需求日益增长，伴随着这种增
长，用来构建单片机的晶体管尺寸则在持续减小。
以更低的成本实现更高的集成度，也促进了对更小
的几何尺寸的需求。随着尺寸的减小，晶体管击穿
电压变得更低，最终，当击穿电压低于电源电压
时，就要求减小电源电压。因此，随着速度的提高
和复杂程度的上升，对于高密度器件而言，不可避
免的后果就是电源电压将从 5V 降至 3.3V，甚至
1.8V。-We are increasing the demand for processing speed, along with this growth, the transistors used to build the single-chip size continues to decrease. Lower cost to achieve higher integration, but also promoted the geometry of a smaller demand. As the size decreases, the transistor breakdown voltage becomes lower, and ultimately, when the breakdown voltage below the supply voltage, then reduce the supply voltage requirements. Thus, with the speed and complexity of the increase, for high-density devices, the inevitable consequence is that the power supply voltage from 5V to 3.3V, or 1.8V.
长，用来构建单片机的晶体管尺寸则在持续减小。
以更低的成本实现更高的集成度，也促进了对更小
的几何尺寸的需求。随着尺寸的减小，晶体管击穿
电压变得更低，最终，当击穿电压低于电源电压
时，就要求减小电源电压。因此，随着速度的提高
和复杂程度的上升，对于高密度器件而言，不可避
免的后果就是电源电压将从 5V 降至 3.3V，甚至
1.8V。-We are increasing the demand for processing speed, along with this growth, the transistors used to build the single-chip size continues to decrease. Lower cost to achieve higher integration, but also promoted the geometry of a smaller demand. As the size decreases, the transistor breakdown voltage becomes lower, and ultimately, when the breakdown voltage below the supply voltage, then reduce the supply voltage requirements. Thus, with the speed and complexity of the increase, for high-density devices, the inevitable consequence is that the power supply voltage from 5V to 3.3V, or 1.8V.
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