玻璃中量子点之间电子的共振隧穿.摘要：在建立玻璃中阻容耦合双量子点模型的基础，通过分析双量子点的静电能和化学势，讨论了化学势随外加偏压的变化和共振隧穿现．随外加偏压的增大，当双量子点2个能级的化学势相等时发生共振隧穿现象，在 特性曲线上呈现电流峰．玻璃中不同间距的量子点用不同大小的耦合电容来表示．随着玻璃中2个量子点之间耦合电容的增大，2个量子点发生共振隧穿所需要的外加偏压随之增大．-glass electronic quantum dots between the resonant tunneling. Abstract : the establishment of glass resistive and capacitive coupling quantum dots model of the foundation, through analysis of the quantum dots electrostatic and chemical potential. discussed the chemical potential bias with the changes and resonant tunneling current. With the increase of bias, when quantum dots two chemical potential energy of the same when resonant tunneling phenomena, In characteristic curve showing current peaks. Glass different spacing with the quantum dots of different sizes to the coupling capacitance said. With Glass two quantum dots coupling capacitance between the increase two spots resonance quantum tunneling by the bias is even greater.