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for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits
in a VLSI chip. To investigate the mismatch drift due to the
hot-carrier-induced gate capacitance variation, internal probing
was performed at room temperature using an electron-beam
prober before and after stre- for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits
in a VLSI chip. To investigate the mismatch drift due to the
hot-carrier-induced gate capacitance variation, internal probing
was performed at room temperature using an electron-beam
prober before and after stress
in a VLSI chip. To investigate the mismatch drift due to the
hot-carrier-induced gate capacitance variation, internal probing
was performed at room temperature using an electron-beam
prober before and after stre- for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits
in a VLSI chip. To investigate the mismatch drift due to the
hot-carrier-induced gate capacitance variation, internal probing
was performed at room temperature using an electron-beam
prober before and after stress
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2\01266626.pdf
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.\06510478 (1).pdf
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