文件名称:SC2272_eng
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MOSFET, which leads to a very low ESD robustness if no
appropriate ESD protection design is applied. Once the RF
front-end circuit is damaged by ESD, it can not be recovered
and the RF functiona
appropriate ESD protection design is applied. Once the RF
front-end circuit is damaged by ESD, it can not be recovered
and the RF functiona
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SC2272_eng.pdf