文件名称:pin-(1)
下载
别用迅雷、360浏览器下载。
如迅雷强制弹出，可右键点击选“另存为”。
失败请重下，重下不扣分。
如迅雷强制弹出，可右键点击选“另存为”。
失败请重下，重下不扣分。
介绍说明－－下载内容均来自于网络，请自行研究使用
Characteristic Analysis of p-i-n Thin-Film
Phototransistor Using Device Simulation.The optoelectronic characteristic of a p-i-n thin-film
phototransistor is analyzed by comparing an actual device with
device simulation. It is found using the actual device that the
detected current is maximized when the control voltage is equal
to the applied voltage.
Phototransistor Using Device Simulation.The optoelectronic characteristic of a p-i-n thin-film
phototransistor is analyzed by comparing an actual device with
device simulation. It is found using the actual device that the
detected current is maximized when the control voltage is equal
to the applied voltage.
(系统自动生成,下载前可以参看下载内容)
下载文件列表
pin (1).pdf