文件名称:pin-(1)
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Characteristic Analysis of p-i-n Thin-Film
Phototransistor Using Device Simulation.The optoelectronic characteristic of a p-i-n thin-film
phototransistor is analyzed by comparing an actual device with
device simulation. It is found using the actual device that the
detected current is maximized when the control voltage is equal
to the applied voltage.
Phototransistor Using Device Simulation.The optoelectronic characteristic of a p-i-n thin-film
phototransistor is analyzed by comparing an actual device with
device simulation. It is found using the actual device that the
detected current is maximized when the control voltage is equal
to the applied voltage.
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pin (1).pdf