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than dc parameter (saturation
current, threshold voltage, etc.) degradation. An electron beam
probing was performed on a 64-Mb DRAM chip to detect the
influence of gate capacitance variation in dynamic circuit blocks
before and after hot-carrier stress.
Index Terms—Gate capacitance variatio
current, threshold voltage, etc.) degradation. An electron beam
probing was performed on a 64-Mb DRAM chip to detect the
influence of gate capacitance variation in dynamic circuit blocks
before and after hot-carrier stress.
Index Terms—Gate capacitance variatio
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