文件名称:VLSI4
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The mismatch drift of dynamic circuits, which must
be corrected by precharging before activation, is a fundamental
process and device reliability issue for very large scale integration
(VLSI) circuits. In this paper, we report the consequences of hotcarrier effects on gate capacitance variation and its impact on
the mismatch drift of MO
be corrected by precharging before activation, is a fundamental
process and device reliability issue for very large scale integration
(VLSI) circuits. In this paper, we report the consequences of hotcarrier effects on gate capacitance variation and its impact on
the mismatch drift of MO
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VLSI4