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  2. IGBTs were first introduced as a combination of the bipolar junction transistor (BJT) and the metal oxide semiconductor field effect transistor (MOSFET) technology. The IGBT is to prefer in medium high voltage segmen
  3. 所属分类:软件工程

    • 发布日期:2024-11-26
    • 文件大小:25kb
    • 提供者:mimo

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